Manufacturing method for semiconductor device and semiconductor device

ABSTRACT

A step of forming a connecting member configured to electrically connect a first conductive line and a second conductive line includes a phase of perforating a laminate from a first semiconductor wafer to form a plurality of connection holes that reach the second conductive line and a phase of filling the plurality of penetrating connection holes with a conductive material to form conductive sections in contact with the second conductive line.

This application is a continuation application of U.S. patentapplication Ser. No. 14/823,728 filed Aug. 11, 2015, which is adivisional application of U.S. patent application Ser. No. 13/904,535,filed May 29, 2013, which claims the benefit of Japanese PatentApplication No. 2012-124838, filed May 31, 2012, both are herebyincorporated by reference herein in its entirety.

BACKGROUND

1. Technical Field

Aspects of the present invention relate to a manufacturing method for asemiconductor device using a plurality of semiconductor substrates.

2. Description of the Related Art

Forming semiconductor devices by laminating semiconductor wafers hasbeen studied for the purposes of reducing footprints and the like. Forsuch semiconductor devices, there is a demand to provide electricalcontinuity between semiconductor wafers. A technique of bondingsemiconductor wafers and then electrically connecting circuits providedon the semiconductor wafers is disclosed in US2011/0102657.Specifically, a connection hole is formed in each semiconductor waferand the connection holes are filled with a conductive material toprovide the electrical continuity.

FIG. 8 is a diagram of exemplified defects that can be caused in asemiconductor device when the manufacturing method described inUS2011/0102657 is used. With reference to FIG. 8, a first semiconductorsubstrate 10 and a second semiconductor substrate 20 have been bondedand laminated with a first wiring structure 31 and a second wiringstructure 32 interposed therebetween. The first wiring structure 31includes a first conductive line 311, and the second wiring structure 32includes a second conductive line 322. In order to connect the firstconductive line 311 and the second conductive line 322 electrically,this laminate has been perforated to form holes 65 and 66 which are thenfilled with a conductive material 68.

As illustrated in FIG. 8, one hole is provided for each conductive line,namely the hole 65 extending toward the second conductive line 322 andthe hole 66 extending toward the first conductive line 311. Hence, aforeign substance 531, as illustrated in FIG. 8, would prevent aconnection hole from being formed to reach the second conductive line322, posing a risk of connection failure between the substrates due todefective perforation. Furthermore, even if a hole is formedsuccessfully to reach the first conductive line 311, a foreign substance532 may prevent a conductive material from being filled in the holesuccessfully to reach the first conductive line 311, posing a risk ofthe connection failure between the substrates due to defective fillingof the conductive material. As a matter of course, the defective fillingmay occur in the hole 65, and the defective perforation may happen tothe hole 66. As described above, the related art suffers from a lowdegree of reliability of the electrical continuity between the firstconductive line 311 and the second conductive line 322.

SUMMARY

A first aspect of the present disclosure includes: preparing a laminateof a first component and a second component, the first componentincluding a first semiconductor substrate and a first conductive linesupported by the first semiconductor substrate, the second componentincluding a second semiconductor substrate and a second conductive linesupported by the second semiconductor substrate; and forming aconnecting member configured to electrically connect the firstconductive line and the second conductive line of the laminate, whereinthe forming of the connecting member includes: a phase of perforatingthe laminate from a side of the first component to form a plurality ofconnection holes that reach the second conductive line; and a phase offilling the plurality of connection holes with a conductive material toform conductive sections in contact with the second conductive line.

A second aspect of the present disclosure includes: preparing a laminateof a first component and a second component, the first componentincluding a first semiconductor substrate and a first conductive linesupported by the first semiconductor substrate, the second componentincluding a second semiconductor substrate and a second conductive linesupported by the second semiconductor substrate; and forming aconnecting member configured to electrically connect the firstconductive line and the second conductive line of the laminate, whereinthe forming of the connecting member includes: a phase of perforatingthe laminate from a side of the first component to form a plurality ofconnection holes that reach the first conductive line; and a phase offilling the plurality of connection holes with a conductive material toform conductive sections in contact with the first conductive line.

A third aspect of the present disclosure includes a first semiconductorsubstrate; a first semiconductor element provided on the firstsemiconductor substrate; a first wiring section connected to the firstsemiconductor element; a second semiconductor substrate; a secondsemiconductor element provided on the second semiconductor substrate; asecond wiring section connected to the second semiconductor element; anda connecting member configured to electrically connect the first wiringsection and the second wiring section, wherein the connecting memberincludes at least one of a plurality of conductive sections providedthrough the first semiconductor substrate and in contact with the firstwiring section and a plurality of conductive sections provided throughthe first semiconductor substrate and in contact with the second wiringsection.

Further features of the present invention will become apparent from thefollowing description of exemplary embodiments (with reference to theattached drawings).

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are schematic views of exemplary semiconductor devices;

FIGS. 2A and 2B are schematic views of an exemplary semiconductordevice;

FIGS. 3A to 3C are schematic views of an exemplary manufacturing methodfor the semiconductor device;

FIGS. 3D to 3F are schematic views of the exemplary manufacturing methodfor the semiconductor device;

FIGS. 4A and 4B are schematic views of an exemplary semiconductordevice;

FIGS. 5A and 5B are schematic views of an exemplary semiconductordevice;

FIGS. 6A to 6D are schematic views of exemplary semiconductor devices;

FIGS. 7A to 7D are schematic views of exemplary semiconductor devices;and

FIG. 8 is a schematic view of a semiconductor device according to areference example.

DESCRIPTION OF THE EMBODIMENTS

Some embodiments will be described herein concerning a semiconductordevice, in which a connecting member is formed for a laminate thatincludes a first component, including a first conductive line, and asecond component, including a second conductive line, the connectingmember being formed for electrically connecting the first conductiveline and the second conductive line. In such embodiments, the connectingmember is provided with redundancy so that reliability can be improvedfor electrical continuity between the first conductive line and thesecond conductive line.

FIG. 1A is a schematic view of an exemplary semiconductor device 1. Thesemiconductor device 1 of this example constitutes an image sensingdevice (a solid-state image sensing device), but it may constitute astorage device, an arithmetic unit, or a display device. Thesemiconductor device 1 includes a first member 100 and a second member200. The first member 100 includes an image sensing region 11 thatincludes an array of photoelectric conversion elements. The secondmember 200 includes a signal processing region 22 that processes asignal obtained by the image sensing region 11. The first member 100 hasan opening 77 to expose an electrode pad 78.

FIGS. 1B and 1C are schematic views of other examples of thesemiconductor device 1 illustrated in FIG. 1A. In an example illustratedin FIG. 1B, a first member 100 includes a control region 12 in additionto the image sensing region 11. In an example illustrated in FIG. 1C, asecond member 200 includes the control region 21 in addition to thesignal processing region 22. In this manner, a control region may beincluded in the first member 100 and/or in the second member 200. Thecontrol region 12 and the control region 21 each refer to a regionprovided with a circuit to control at least one of the image sensingregion 11 and the signal processing region 22.

The first member 100 includes a first semiconductor substrate and afirst wiring structure. The second member 200 includes a secondsemiconductor substrate and a second wiring structure. The image sensingregion 11, the control region 12, the control region 21, and the signalprocessing region 22 each include an integrated circuit that includes agroup of semiconductor elements, such as a transistor and a diode, on asemiconductor substrate. Circuits in these regions are connected so asto send and receive signals to/from circuits in any regions. The firstmember 100 includes a semiconductor element (a first semiconductorelement), provided on the first semiconductor substrate, and a firstwiring section connected to the first semiconductor element. The secondmember 200 includes a semiconductor element (a second semiconductorelement), provided on the second semiconductor substrate, and a secondwiring section connected to the second semiconductor element.

In the present embodiment, the first wiring section, connected to thefirst semiconductor element, and the second wiring section, connected tothe second semiconductor element, are connected with each other by aconnecting member. This enables the first semiconductor element and thesecond semiconductor element to be connected electrically throughinter-substrate wiring, which is constituted by the first wiringsection, the connecting member, and the second wiring section. Someembodiments of the electrical continuity will now be described indetail.

An example of a first embodiment will now be described with reference toFIGS. 2A and 2B. FIG. 2A is a cross-sectional view of a configuration asillustrated in FIG. 1B taken along a line P-Q of FIG. 1A. FIG. 2B is adiagram of plan views of part (including a connecting member 69) of FIG.2A enclosed by a broken line at positions A, B, C, D, E, and F.

A first semiconductor substrate 10 includes a photodiode PD andtransistors Tr1 and Tr2 as semiconductor elements constituting the imagesensing region 11. In addition, the first semiconductor substrate 10includes transistors Tr3 and Tr4 as semiconductor elements constitutingthe control region 12.

A first wiring structure 31 is provided on a surface of the firstsemiconductor substrate 10. The first wiring structure 31 includes aconductor section that includes a contact plug 44 and a group of metallayers 45. The group of metal layers 45 includes a first metal layer 45a, a second metal layer 45 b, and a third metal layer 45 c. In addition,the first wiring structure 31 includes an insulator section thatincludes a surface insulating film and an interlayer insulating film 46.The surface insulating film includes a first surface insulating layer 43a and a second surface insulating layer 43 b. The conductor section isembedded in the insulator section. Part of the conductor section may beexposed from the insulator section. The conductor section of the firstwiring structure 31 includes (many) conductive lines, each of whichconstitutes an electrical path. Here, that one conductive line refers toa continuous part of the conductor section. Conversely, the conductivelines of the conductor section are discontinuous from each other becauseof the insulator section in the wiring structure or a semiconductorsection of the semiconductor substrate. From an electric circuitviewpoint, one conductive line is an electrically continuous part thatconstitutes one node. A description will be now provided with a focus ona first wiring section 310 that constitutes one conductive line(inter-substrate wiring) in the first wiring structure 31.

The first wiring section 310, illustrated in FIG. 2A, is electricallyconnected to the transistors Tr3 and Tr4. The first wiring section 310includes the contact plug 44, the first metal layer 45 a, the secondmetal layer 45 b, and the third metal layer 45 c.

A second semiconductor substrate 20 includes transistors Tr6, Tr7, andTr8 as semiconductor elements constituting the signal processing region22.

A second wiring structure 32 is provided on a surface of the secondsemiconductor substrate 20. The second wiring structure 32 includes aconductor section that includes a contact plug 54 and a group of metallayers 55. The group of metal layers 55 includes a first metal layer 55a, a second metal layer 55 b, a third metal layer 55 c, and a fourthmetal layer 55 d. In addition, the second wiring structure 32 includesan insulator section that includes a surface insulating film and aninterlayer insulating film 56. The surface insulating film includes afirst surface insulating layer 53 a and a second surface insulatinglayer 53 b. The conductor section is embedded in the insulator section.Part of the conductor section may be exposed from the insulator section.Similarly to the first wiring section 310, a description will beprovided with a focus on a second wiring section 320 that constitutesone conductive line (inter-substrate wiring) in the second wiringstructure 32.

The second wiring section 320, illustrated in FIG. 2A, is electricallyconnected to the transistors Tr6 and Tr7. The second wiring section 320includes the contact plug 54, the first metal layer 55 a, the secondmetal layer 55 b, the third metal layer 55 c and the fourth metal layer55 d. Note that it appears in FIG. 2A as if the second wiring section320 is not connected to the transistors Tr6 and Tr7, but the metallayers are actually continuous at a location not shown in the figure.

In this example, a primary material of the contact plugs 44 and 54 istungsten. A primary material of the first metal layer 45 a, the secondmetal layer 45 b, the third metal layer 45 c, the first metal layer 55a, the second metal layer 55 b, and third metal layer 55 c is copper. Aprimary material of the fourth metal layer 55 d is aluminum. Note thatthe materials are not limited to those described above.

The first wiring structure 31 and the second wiring structure 32 arejoined mechanically to form the wiring structure 30. In this example,the joining of the first wiring structure 31 and the second wiringstructure is achieved with an attaching layer 60. The first wiringsection 310 of the first wiring structure 31 and the second wiringsection 320 of the second wiring structure 32 are connected electricallywith each other by the connecting member 69 that is a conductor. Thefirst wiring section 310, the second wiring section 320, and theconnecting member 69 constitute the inter-substrate wiring. Theconnecting member 69 includes a first penetrating conductive section6821 and a second penetrating conductive section 6822. The firstpenetrating conductive section 6821 and the second penetratingconductive section 6822 are each a conductive section in contact withthe second wiring section 320. The connecting member 69 according to thepresent embodiment further includes a coupling conductive section 680, afirst non-penetrating conductive section 6811, and a secondnon-penetrating conductive section 6812. The first non-penetratingconductive section 6811 and the second non-penetrating conductivesection 6812 are each a conductive section in contact with the firstwiring section 310.

In this example, a primary material of the coupling conductive section680, the first non-penetrating conductive section 6811, the secondnon-penetrating conductive section 6812, the first penetratingconductive section 6821 and the second penetrating conductive section6822 is copper, but it may be tungsten. The material is not limited tothose describe above, and a plurality of materials may be used for theconnecting member 69. For example, aluminum may be used for the couplingconductive section 680 as the primary material, and tungsten may be usedfor first non-penetrating conductive section 6811, the secondnon-penetrating conductive section 6812, the first penetratingconductive section 6821, and the second penetrating conductive section6822 as the primary material.

The coupling conductive section 680 mutually connects the firstnon-penetrating conductive section 6811, the second non-penetratingconductive section 6812, the first penetrating conductive section 6821,and the second penetrating conductive section 6822. Here, a plurality ofcoupling conductive sections 680 may be provided so that a firstcoupling conductive section connects the first non-penetratingconductive section 6811 and the first penetrating conductive section6821, and a second coupling conductive section connects the secondnon-penetrating conductive section 6812 and the second penetratingconductive section 6822.

The first non-penetrating conductive section 6811 and the secondnon-penetrating conductive section 6812 are in contact with the firstwiring section 310. In the present embodiment, the first non-penetratingconductive section 6811 and the second non-penetrating conductivesection 6812 are in contact with the first metal layer 45 a thatconstitutes part of the first wiring section 310. In the presentembodiment, the first non-penetrating conductive section 6811 and thesecond non-penetrating conductive section 6812 each penetrate the firstsemiconductor substrate 10. The first non-penetrating conductive section6811 and the second non-penetrating conductive section 6812, however, donot penetrate the first wiring structure 31. The second non-penetratingconductive section 6812 may be excluded so that there is one conductivesection that is in contact with the first wiring section 310. There maybe three or more conductive sections that are in contact with the firstwiring section 310.

The first penetrating conductive section 6821 and the second penetratingconductive section 6822 are in contact with the second wiring section320. In the present embodiment, the first penetrating conductive section6821 and the second penetrating conductive section 6822 are connected tothe fourth metal layer 55 d that constitutes part of the second wiringsection 320. In the present embodiment, the first penetrating conductivesection 6821 and the second penetrating conductive section 6822 eachpenetrate the first semiconductor substrate 10 and further penetrate theinterlayer insulating film 46 of the first wiring structure 31.

Planes A to F, illustrated in FIG. 2B, will now be described. In theplane A, the coupling conductive section 680 is enclosed by aninsulating layer 62. In the plane B, the first non-penetratingconductive section 6811, the second non-penetrating conductive section6812, the first penetrating conductive section 6821, and the secondpenetrating conductive section 6822 are each enclosed by the firstsemiconductor substrate 10. In the plane C, the first non-penetratingconductive section 6811, the second non-penetrating conductive section6812, the first penetrating conductive section 6821, and the secondpenetrating conductive section 6822 are each enclosed by the interlayerinsulating film 46. In the plane D, a pattern of the first metal layer45 a that constitutes the first wiring section 310 is located. Also, thefirst penetrating conductive section 6821 and the second penetratingconductive section 6822 are each enclosed by the interlayer insulatingfilm 46. In the plane E, the first penetrating conductive section 6821and the second penetrating conductive section 6822 are each enclosed bythe interlayer insulating film 46. In the plane F, a pattern of thefourth metal layer 55 d that that constitutes the second wiring section320 is located.

As described above, the connecting member 69 according to the presentembodiment includes conductive sections (the first penetratingconductive section 6821 and the second penetrating conductive section6822), each of which is connected to the second wiring section 320. Notethat providing a plurality of penetrating conductive sections in contactwith the second wiring section 320 results in a plurality of conductivesections residing separately in a plane parallel to the semiconductorsubstrate as illustrated in FIG. 2B. The conductive sections havesubstantially an identical potential through at least the second wiringsection 320. In other words, the conductive sections are electricallycontinuous. In this way, even if one penetrating conductive sectionsuffers from a connection failure, the connection between the firstwiring section 310 and the second wiring section 320 is secured becauseof another penetrating conductive section. In other words, by providingredundancy for the connection between the second wiring section 320 andthe first wiring section 310, the reliability of the connection betweenthe second wiring section 320 and the first wiring section 310 isimproved. Three or more conductive sections may be in contact with thesecond wiring section 320. Such a connecting method enables improvementof the reliability of the electrical continuity between the first wiringsection 310 and the second wiring section 320.

Also note that the redundancy is provided for both the conductivesections (the non-penetrating conductive sections) in contact with thefirst wiring section 310 and the conductive sections (the penetratingconductive sections) in contact with the second wiring section 320. Oneof the conductive sections in contact with the first wiring section 310and the conductive section in contact with the second wiring section320, however, may be provided with the redundancy. It is desirable,though, that at least the conductive section (the penetrating conductivesection) for the second wiring section 320 be provided with theredundancy. This is because the conductive section (the penetratingconductive section) in contact with the second wiring section 320 istypically extended deeply than the conductive section in contact withthe first wiring section 310, and, thus, more susceptible to theconnection failure due to a foreign substance.

In a semiconductor device, a plurality of wiring sections is connectedto each semiconductor element provided on the first semiconductorsubstrate 10. Also, a plurality of wiring sections is connected to eachsemiconductor element provided on the second semiconductor substrate 20.These wiring sections are paired, and a large number of groups, each ofwhich includes a pair of wiring sections and a connecting memberconnecting the pair of wiring sections, is provided as theinter-substrate wiring. For example, in a case in which the imagesensing region 11 includes pixels arrayed in rows and columns, andsignals output from these columns are transferred in parallel to thesignal processing region 22, the connecting member 69 is provided foreach column. For example, in a case in which the image sensing region 11includes a pixel array of 3000 rows×4000 columns, the number ofconnecting members 69 can be 4000. If even one of the 4000 connectingmembers 69 suffers a problem, an operation of all the 3000 pixels in therow of the one connecting member 69 will be unstable, possibly resultingin a lowered yield if the instability brings about an intolerableeffect. By providing the redundancy for the connecting member 69,however, the yield can be improved.

Other components in FIG. 2A will now be described. An insulating film 67is provided between the connecting member 69 and the semiconductorsubstrate 10. The insulating film 67 is provided so as to enclose eachof the first non-penetrating conductive section 6811, the secondnon-penetrating conductive section 6812, the first penetratingconductive section 6821, and the second penetrating conductive section6822, in order to insulate the connecting member 69 from thesemiconductor substrate 10. Note that, in FIG. 2B, the insulating film67 is not shown. An isolating section 42 electrically isolates oneconnecting member 69 from another connecting member 69. The isolatingsection 42 also electrically isolates the connecting member 69 from thesemiconductor elements. Depending on the layout of the isolating section42, the insulating film 67 may be excluded. Alternatively, the isolatingsection 42 may be excluded, so that the insulating film 67 insulates oneconnecting member 69 from another connecting member 69. In order toimprove the reliability, it is desirable that the insulating film 67 andthe isolating section 42 are used concurrently. The first semiconductorsubstrate 10 and the second semiconductor substrate 20 include elementisolating sections 16 and 26, respectively, for isolating thesemiconductor elements. An image sensing device 1 includes the electrodepad 78 for communicating with the outside. The electrode pad 78 isexposed from the opening 77 that penetrates the first semiconductorsubstrate 10, the interlayer insulating film 46, and the like. A metalwire 79 is connected to the electrode pad 78 as illustrated in FIG. 8.In this example, the connection with the outside is achieved throughwire bonding. Alternatively, flip chip connection with a through-siliconvia may be used.

Furthermore, in the case with the image sensing device 1, an opticalstructure 40 is provided on the first semiconductor substrate 10 on aside opposite to the second semiconductor substrate 20. The opticalstructure 40 includes an anti-reflection layer 61, the first insulatinglayer 62, a second insulating layer 71, a light shield 63, a cap 70, anintermediate layer 72, a color filter 73 (an on-chip color filter), anda micro lens 74 (an on-chip micro lens). The second insulating layer 71has a higher refractive index than the first insulating layer 62. Thesecond insulating layer 71, as a core, and the first insulating layer62, as a clad, form an optical waveguide LG on the photodiode PD.

The footprint of a semiconductor device can be reduced by laminating aplurality of semiconductor substrates as described above, therebycontributing to reduction in size of an electronic apparatus. Anotherfactor in the reduction in footprint is connecting the semiconductorsubstrates at the insides of the outer peripheries of the semiconductorsubstrates, not at the outsides of the outer peripheries of thesemiconductor substrates through, for example, the wire bonding. Thesemiconductor device as an image sensing device serves an electronicapparatus such as a digital camera and an information terminal equippedwith a camera function. The electronic apparatus can further include adisplay such as a liquid crystal display and an EL display to display animage captured by the image sensing device. The display can constitute atouch panel.

A manufacturing method for a semiconductor device will now be describedon the basis of the image sensing device illustrated in FIG. 2A as anexample. A typical semiconductor device (a semiconductor chip) ismanufactured by forming an integrated circuit in each of regions of asemiconductor wafer including a semiconductor substrate made of silicon,and then dividing (dicing) the semiconductor wafer. The descriptionhereinafter does not particularly differentiate between semiconductorsubstrates before and after the dicing.

As illustrated in FIG. 3A, the image sensing region and the controlregion are formed in the first semiconductor substrate 10. Thephotodiode PD is constituted by an N-type semiconductor region 14 and aP-type semiconductor region 15 that is located toward a side of asurface of the substrate. The N-type semiconductor region 14 and theP-type semiconductor region 15 are formed in a P-type semiconductorregion 13 as a well region (or a substrate). A gate electrode is formedon the surface of the substrate with a gate insulating film interposedtherebetween. Source/drain regions corresponding to the gate electrodeare created to form a MOS transistor. In FIG. 3A, two transistors Tr1and Tr2 are illustrated to represent a plurality of MOS transistors of apixel circuit. The transistor Tr1 adjacent to the photodiode (PD)corresponds to a transfer transistor and the drain region of thetransistor Tr1 corresponds to a floating diffusion (FD). The transistorTr2 corresponds to a reset transistor. Each unit of pixels is isolatedby the element isolating section 16.

In the control region 12, a plurality of MOS transistors thatconstitutes a control circuit is formed. In FIG. 3A, two transistors Tr3and Tr4 are illustrated to represent a plurality of MOS transistors of adrive circuit.

The surface insulating film is then formed on the surface of the firstsemiconductor substrate 10 by laminating successively the first surfaceinsulating layer 43 a made of silicon oxide and the second surfaceinsulating layer 43 b made of silicon nitride. Furthermore, a firstlayer of the interlayer insulating film 46, which is a multilayer film,is formed. Subsequently, a contact hole is formed in the firstinsulating layer of the interlayer insulating film 46 and the surfaceinsulating layers. The contact hole is filled with a material, such astungsten, to form the contact plug 44 that is to be connected to anappropriate transistor. The second surface insulating layer 43 bfunctions as an etching stopper while the contact hole is formed.

In addition, after the second surface insulating layer 43 b is formed,the isolating section 42 is formed to isolate a desired region in theP-type semiconductor region 13 of the first semiconductor substrate 10.The isolating section 42 is formed, after the formation of the secondsurface insulating layer 43 b, by forming an opening in the firstsemiconductor substrate 10 from the side of the surface thereof at adesired location and filling the opening with an insulating material.The isolating section 42 is formed in a region that is to enclose theconnecting member 69 to be formed later.

Then, a plurality of metal layers (three layers in this example) isformed with insulating layers of the interlayer insulating filminterposed therebetween to form the first wiring structure 31. Theplurality of metal layers is formed so as to be in contact with thecontact plug 44. In the case in which the primary material of the metallayers is the copper, each metal layer can include a barrier metal layermade of Ti and/or TiN, and the interlayer insulating film can include ananti-diffusion layer made of a material, such as SiN and SiC. A copperconductive line is formed with a publicly known method such as adamascene process.

In the steps described above, a first semiconductor wafer 111, whichincludes the first semiconductor substrate 10 and the first wiringstructure 31, is formed as an intermediate structure, in other words, afirst component. The first semiconductor substrate 10 is provided withthe image sensing region 11 and the control region 12. The first wiringstructure 31 includes a first conductive line 311. The first conductiveline 311 will be the first wiring section 310 of the inter-substratewiring after the formation of the connecting member 69, which is to bedescribed hereinafter. The first conductive line 311 is supported, aspart of the first wiring structure 31, by the first semiconductorsubstrate 10.

Meanwhile, the signal processing region is formed in the secondsemiconductor substrate 20 as illustrated in FIG. 3B. In other words, aplurality of MOS transistors that constitutes a signal processingcircuit is formed in a P-type semiconductor region 23 on a surface ofthe second semiconductor substrate 20 such that the plurality of MOStransistors is isolated by the element isolating section 26. Here, theplurality of MOS transistors is represented by the transistors Tr6, Tr7,and Tr8. A logic circuit can have a CMOS (Complementary Metal OxideSemiconductor) structure.

The surface insulating film is then formed on the surface of the secondsemiconductor substrate 20 by laminating successively the first surfaceinsulating layer 53 a and the second surface insulating layer 53 b.Similarly to the first wiring structure 31, the contact plug 54, thegroup of metal layers 55, and the interlayer insulating film 56 areformed. The fourth metal layer 55 d, which contains the aluminum as theprimary material, can include a barrier metal made of Ti and/or TiN.

It is desirable that a stress reducing film 59 be formed on the secondwiring structure 32. The stress reducing film 59 is for relievingwarpage that can occur while the first semiconductor substrate 10 andthe second semiconductor substrate 20 are bonded. The stress reducingfilm 59 may be formed by, for example, forming a P—SiN film or a P—SiONfilm (a plasma oxynitride film) to have a thickness of 100 to 2000 nm.

In the steps described above, a second semiconductor wafer 222, whichincludes the second semiconductor substrate 20 and the second wiringstructure 32 is formed as an intermediate structure, in other words, asecond component. The second semiconductor substrate 20 is provided withthe signal processing region 22. The second wiring structure 32 includesa second conductive line 322. The second conductive line 322 will be thesecond wiring section 320 of the inter-substrate wiring after theformation of the connecting member 69, which is to be describedhereinafter. The second conductive line 322 is supported, as part of thesecond wiring structure 32, by the second semiconductor substrate 20.

The first semiconductor wafer 111 and the second semiconductor wafer 222are then laminated and bonded to be joined together as illustrated inFIG. 3C. In this example, the first semiconductor wafer 111 and thesecond semiconductor wafer 222 are joined such that the first wiringstructure 31 and the second wiring structure 32 are located between thefirst semiconductor substrate 10 and the second semiconductor substrate20. The bonding is performed with, for example, an adhesive. In thisexample, the first semiconductor substrate 10, provided with the imagesensing region, is located at an upper part and the second semiconductorsubstrate 20 is located at a lower part when bonded together.

In this example, the first wiring structure 31, which is located on thefirst semiconductor substrate 10, is bonded with the second wiringstructure 32, which is located on the second semiconductor substrate 20,with the attaching layer 60 interposed therebetween. Alternatively, thebonding may be achieved through a plasma joining technique. In the casewith the plasma joining technique, a plasma TEOS film, a plasma SiNfilm, a SiON film (a block film), or a SiC film is formed on eachjoining surface of the first wiring structure 31 and the second wiringstructure 32. The joining surfaces, each with the film formed thereon,are processed with plasma and put against each other. Subsequently, thejoining surfaces are subjected to an anneal process to be joined. Thebonding is preferably performed in a low-temperature process having atemperature not more than 400° C., which does not affect a conductiveline and the like. By laminating and bonding the first semiconductorsubstrate 10 and the second semiconductor substrate 20, a laminate 300of the two semiconductor wafers is formed. The first conductive line 311and the second conductive line 322 in this state are not electricallycontinuous.

The connecting member 69 is then formed in the laminate 300 prepared asdescribed above. The connecting member 69 is for providing electricalcontinuity between the first conductive line 311 and the secondconductive line 322. The first semiconductor substrate 10 is processedfrom a backside thereof with mechanical polishing, chemical mechanicalpolishing (CMP), wet etching, or dry etching in order to reduce athickness of the first semiconductor substrate 10. The thickness of thefirst semiconductor substrate 10 is, for example, approximately 600 μmbefore the reducing. The thickness of the first semiconductor substrate10 is, for example, not more than 10 μm, and typically, approximately 3to 5 μm after the reduction. In the present embodiment, the reducing ofthe thickness of the first semiconductor substrate 10 is performed withthe second semiconductor substrate 20, which includes the signalprocessing region 22, used as a supporting substrate. The backside ofthe first semiconductor substrate 10 will be a light entry surface, sothat an image sensing device of a so-called backside illumination typecan be obtained. The reduction in thickness is not always demandeddepending on the application of a semiconductor device. The reduction inthickness of the first semiconductor substrate 10, however, can reduce atime for forming a penetrating connection hole and a non-penetratingconnection hole, which is to be described hereinafter.

The anti-reflection layer 61 is then formed on the backside of the firstsemiconductor substrate 10 as illustrated in FIG. 3D. Theanti-reflection layer 61 can be formed with, for example, SiN, TaO₂, orHfO₂ to have a thickness of 5 to 100 nm. By performing a heat treatment,an effect of suppressing a dark current can be added. Subsequently, thefirst insulating layer 62 is formed on the anti-reflection layer 61 byforming a plasma SiO film to have a thickness of 100 to 1500 nm.

Furthermore, as illustrated in FIG. 3D, a coupling groove 64 is formedat a desired region inside the isolating section 42. Also, a lightshield groove 82 is formed at a region to be a light-shielded region inwhich light should be shielded. The coupling groove 64 and the lightshield groove 82 are formed by etching the first insulating layer 62from a top side thereof to form an opening. The first insulating layer62 has been formed on the backside of the first semiconductor substrate10. The opening is formed to have a depth that, for example, does notreach the first semiconductor substrate 10.

Furthermore, as illustrated in FIG. 3D, perforation is performed from adesired bottom region in the coupling groove 64, which is formed insidethe isolating section 42, to obtain a depth that almost reaches anymetal layer (in this example, the first metal layer 45 a, which is theclosest to the first semiconductor substrate 10) of the group of metallayers 45 in the first wiring structure 31. The perforation can beperformed by the dry etching using a mask pattern provided on a backsideof the first semiconductor wafer 111 (a side opposite to the firstwiring structure 31 with respect to the first semiconductor substrate10). A first non-penetrating connection hole 651 and a secondnon-penetrating connection hole 652 are formed in accordance with themask pattern to reach the first conductive line 311. The firstnon-penetrating connection hole 651 and the second non-penetratingconnection hole 652 preferably have depths that at least penetrate thefirst semiconductor substrate 10. In the illustrated example, twonon-penetrating connection holes are provided. Alternatively, one hole,or three or more holes, may be provided.

Similarly, the perforation is performed from a desired bottom region inthe coupling groove 64, which has been formed inside the isolatingsection 42, to obtain a depth that almost reaches any metal layer (inthis example, the fourth metal layer 55 d, which is the farthest fromthe second semiconductor substrate 20) of the group of metal layers 55in the second wiring structure 32. The perforation can be performed bythe dry etching using a mask pattern provided on the backside of thefirst semiconductor wafer 111 (the side opposite to the first wiringstructure 31 with respect to the first semiconductor substrate 10). Afirst penetrating connection hole 661 and a second penetratingconnection hole 662 are formed in accordance with the mask pattern toreach the second conductive line 322. The mask pattern may be formed ofan organic material. The use of an inorganic material as a so-calledhard mask, however, can facilitate the formation of the connectionholes. In addition, the connection holes are formed after the bonding inthis example. Alternatively, the first semiconductor wafer 111, beforeit is bonded, may be provided with the holes having appropriate depthsin advance.

The first non-penetrating connection hole 651 and the secondnon-penetrating connection hole 652, as well as the first penetratingconnection hole 661 and the second penetrating connection hole 662, areformed from the side of the first semiconductor wafer 111 opposite tothe second semiconductor wafer 222 toward the first conductive line 311and the second conductive line 322. The first penetrating connectionhole 661 and the second penetrating connection hole 662 are formed fromthe side of the first semiconductor wafer 111, not from the side of thesecond semiconductor wafer 222, in order to facilitate the connectionwith the first conductive line 311.

The depths of the first penetrating connection hole 661 and the secondpenetrating connection hole 662, which almost reach the secondconductive line 322, preferably penetrate at least the firstsemiconductor substrate 10. It is preferable that the depths of thefirst penetrating connection hole 661 and the second penetratingconnection hole 662 also penetrate the first wiring structure 31. In theillustrated example, two penetrating connection holes are provided.Alternatively, one hole, or three or more holes, may be provided.

The penetrating connection holes (the first penetrating connection hole661 and the second penetrating connection hole 662) are formed moredeeply than the non-penetrating connection holes (the firstnon-penetrating connection hole 651 and the second non-penetratingconnection hole 652). These connection holes with different depths maybe formed simultaneously. It is, however, preferable that theseconnection holes be formed at separate phases, and in this case, thepenetrating connection holes are preferably formed before the formationof the non-penetrating connection holes for reasons to be describedbelow. The defective formation of a connection hole may be caused by theforeign substance 531 as illustrated in FIG. 8. A by-product producedduring the formation of a preceding connection hole may turn to aforeign substance to the formation of a succeeding connection hole. Theforeign substances 531 and 532 may deposit on the laminate 300 atvarious timings. In particular, a foreign substance, which is producedduring processing inside a forming apparatus for a connection hole or afilm forming apparatus for a conductive material, is less likely to beremoved by washing or the like, and thus has a significant effect on theperforation of the connection hole and the filling of the conductivematerial. The by-product is more likely to be produced during theformation of a deep connection hole (a penetrating connection hole) incomparison with the formation of a shallow connection hole (anon-penetrating connection hole). In addition, a foreign substance ismore likely to cause the defective formation during the formation of adeep connection hole (a penetrating connection hole) in comparison withthe formation of a shallow connection hole (non-penetrating connectionhole). Forming a deep connection hole earlier, therefore, can facilitatethe formation of the deep connection hole.

The penetrating connection holes 661 and 662 are preferably formed tohave diameters 1.5 to 10 times larger than those of the firstnon-penetrating connection hole 651 and the second non-penetratingconnection hole 652. More preferably, the penetrating connection holes661 and 662 are formed to have diameters 3 to 4 times larger than thoseof the first non-penetrating connection hole 651 and the secondnon-penetrating connection hole 652. Note that the diameters of thepenetrating connection holes and the non-penetrating connection holesshould be compared on an identical plane parallel to the secondsemiconductor substrate 20.

If the first penetrating connection hole 661 and the second penetratingconnection hole 662 have diameters smaller than 1.5 times that of thefirst non-penetrating connection hole 651 and the second non-penetratingconnection hole 652, the first penetrating connection hole 661 and thesecond penetrating connection hole 662 have increased aspect ratios.This may result in a void caused at a later phase to fill the holes withthe conductive material. If the first penetrating connection hole 661and the second penetrating connection hole 662 have diameters largerthan 10 times that of the first non-penetrating connection hole 651 andthe second non-penetrating connection hole 652, the first penetratingconnection hole 661 and the second penetrating connection hole 662occupy an increased area. This may preclude the reduction in size of adevice. Hence, it is preferable that the first penetrating connectionhole 661 and the second penetrating connection hole 662 have diameters1.5 to 10 times larger than that of the first non-penetrating connectionhole 651 and the second non-penetrating connection hole 652. This allowsa hole that has an aspect ratio most suitable for the filling of aconductive material and prevents an increase in a layout space.

The first non-penetrating connection hole 651 and the secondnon-penetrating connection hole 652, and the first penetratingconnection hole 661 and the second penetrating connection hole 662 areformed after the thickness reduction of the first semiconductorsubstrate 10. This reduces the aspect ratios and allows the holes to beformed as fine pores. Here, if the thickness reduction is not performed,the first non-penetrating connection hole 651 and the secondnon-penetrating connection hole 652 can be formed in advance before thebonding step. In addition, the first non-penetrating connection hole 651and the second non-penetrating connection hole 652 are formed by formingopenings to almost reach a lowermost layer in the first wiring structure31 on the top of the first semiconductor substrate 10, in other words,the first metal layer 45 a, which is the closest to the firstsemiconductor substrate 10. Hence, the openings have shallow depths,which is advantageous to the formation of fine pores. A plurality ofopenings is formed for one paired connection, which can reduce theoccurrence of poor conductivity due to a foreign substance, a void, analignment failure, and the like. Note that, in this example, thepenetrating connection holes and the non-penetrating connection holesare of cylindrical shapes having constant diameters in a depthdirection. The penetrating connection holes and/or the non-penetratingconnection holes may be forward tapered to have diameters reducingtoward the conductive lines, in order to facilitate the filling of aconductive material.

The insulating film 67, made of, for example, a SiO₂ film, is thenformed in a region including a side wall and a bottom of each of thefirst non-penetrating connection hole 651 and the second non-penetratingconnection hole 652, and the first penetrating connection hole 661 andthe second penetrating connection hole 662. Subsequently, the insulatingfilm 67 is etched back. In this way, the insulating film 67 are providedon the respective side wall of the first non-penetrating connection hole651 and the second non-penetrating connection hole 652, and the firstpenetrating connection hole 661 and the second penetrating connectionhole 662, while the insulating film 67 being removed from on therespective bottom of the holes, as illustrated in FIG. 3D. Subsequently,the bottom of each of the first non-penetrating connection hole 651 andthe second non-penetrating connection hole 652, and the firstpenetrating connection hole 661 and the second penetrating connectionhole 662 is further etched for removal. In this way, a metal layer (thefirst metal layer 45 a) in the first wiring structure 31 is exposed inthe first non-penetrating connection hole 651 and the secondnon-penetrating connection hole 652, and a metal layer (the fourth metallayer 55 d) in the second wiring structure 32 is exposed in the firstpenetrating connection hole 661 and the second penetrating connectionhole 662.

As a result, the first non-penetrating connection hole 651 and thesecond non-penetrating connection hole 652 reach the first metal layer45 a of the first conductive line 311 provided in the first wiringstructure 31. Also, the first penetrating connection hole 661 and thesecond penetrating connection hole 662 penetrate the first wiringstructure 31 and the joining surface (the attaching layer 60) of thesecond wiring structure 32 to reach the fourth metal layer 55 d of thesecond conductive line 322 provided in the second wiring structure 32.Here, part of the second wiring structure 32 should be perforated inaddition to the first wiring structure 31, so that a penetratingconnection hole reaches a metal layer embedded in the second wiringstructure 32. If, however, the second conductive line 322 in the secondsemiconductor wafer 222 is exposed at a surface of the second wiringstructure 32, perforating the first semiconductor substrate 10 and thefirst wiring structure 31 is sufficient, and hence the secondsemiconductor wafer 222 does not have to be perforated. Furthermore, ifthe first conductive line 311 is exposed at a surface of the firstwiring structure 31, the formation of the non-penetrating connectionhole may be excluded.

Subsequently, as illustrated in FIG. 3E, a conductive material, such ascopper and tungsten, is deposited in regions including the couplinggroove 64, the light shield groove 82, the first non-penetratingconnection hole 651 and the second non-penetrating connection hole 652,and the first penetrating connection hole 661 and the second penetratingconnection hole 662. A surface is then polished with the CMP (ChemicalMechanical Polishing) to remove an excess conductive material. In thisway, the conductive material present inside the coupling groove 64, thelight shield groove 82, the first non-penetrating connection hole 651and the second non-penetrating connection hole 652, and the firstpenetrating connection hole 661 and the second penetrating connectionhole 662 survives. In other words, the connecting member 69 is formedwith a so-called damascene process. In this example, a dual damasceneprocess is employed, in which a groove (a trench) and a hole (a via) areboth formed and then filled with a conductive material. In addition, inthis example, a trench-first dual-damascene process is used, in whichthe groove (the trench) is formed before the hole (the via). A via-firstdual-damascene process may also be used, in which the hole (the via) isformed before the groove (the trench). Here, a plating method may beused for filling the copper as the conductive material, and a sputteringmethod or a CVD method may be used for filling the tungsten. The lightshield 63 is also formed through the damascene process. In this way, thecoupling groove 64, the light shield groove 82, the firstnon-penetrating connection hole 651 and the second non-penetratingconnection hole 652, and the first penetrating connection hole 661 andthe second penetrating connection hole 662 are filled with theconductive material. The group of metal layers 45 formed in the firstwiring structure 31 and the group of metal layers 55 formed in thesecond wiring structure 32 are electrically connected. This creates theconnecting member 69 in the region inside the isolating section 42 andthe light shield 63 in the light-shielded region. The non-penetratingconductive sections 6811 and 6812 are formed in the firstnon-penetrating connection hole 651 and the second non-penetratingconnection hole 652, respectively. The penetrating conductive sections6821 and 6822 are formed in the first penetrating connection hole 661and the second penetrating connection hole 662, respectively. Thecoupling conductive section 680, which is formed in the coupling groove64 and includes damascene wiring, electrically connects thenon-penetrating conductive sections 6811 and 6812 and the penetratingconductive sections 6821 and 6822.

At this point, the fourth metal layer 55 d, formed in the second wiringstructure 32 on the second semiconductor substrate 20, is provided withthe barrier metal layer. Hence, even if the connecting member 69 is madeof copper, the diffusion of the copper is prevented. In addition, theside walls, which are located inside the first non-penetratingconnection hole 651 and the second non-penetrating connection hole 652,and the first penetrating connection hole 661 and the second penetratingconnection hole 662, and penetrate the first semiconductor substrate 10,are provided with the insulating films 67. Hence, the connecting member69 and the first semiconductor substrate 10 are electrically isolatedfrom each other, and will not be connected with each other. In addition,in this example of the present embodiment, the connecting member 69 isformed inside the isolating section 42 provided in the firstsemiconductor substrate 10, which also prevents the electricalconnection between the connecting member 69 and the first semiconductorsubstrate 10.

In the step to form the connecting member 69 according to this exampleof the present embodiment, the coupling groove 64, the light shieldgroove 82, the first non-penetrating connection hole 651 and the secondnon-penetrating connection hole 652, and the first penetratingconnection hole 661 and the second penetrating connection hole 662 areformed in three separate phases using the damascene process to fill thecopper. This, however, is not intended to be limiting. Variousmodifications are possible as long as the connecting member 69 is formedto electrically connect the first metal layer 45 a, located in the firstwiring structure 31 on the top of the first semiconductor substrate 10,and the fourth metal layer 55 d, located in the second wiring structure32 on the top of the second semiconductor substrate 20.

For example, the connecting member 69 can be deposited with the CVDmethod or the sputtering method, and formed with typical lithography andthe dry etching. In this way, however, sensitivity degradation due tothe deposition of metal layers will be less likely to be tolerable.Hence, it is desirable that a damascene wiring structure with minimizedlamination of insulating films be used.

Furthermore, in this example, the light shield groove 82, which is forforming the light shield 63, is formed simultaneously with the couplinggroove 64, which is for forming the connecting member 69. The lightshield groove 82 may be, however, formed after the formation of thecoupling groove 64, the first non-penetrating connection hole 651 andthe second non-penetrating connection hole 652, the first penetratingconnection hole 661 and the second penetrating connection hole 662, andthe isolating section 42. In this case, the light shield groove 82 isformed on a layer identical to that of the coupling groove 64. Also, thelight shield groove 82 is filled with the conductive materialsimultaneously with the coupling groove 64, the first non-penetratingconnection hole 651 and the second non-penetrating connection hole 652,and the first penetrating connection hole 661 and second penetratingconnection hole 662. Processing the light shield groove 82simultaneously with the coupling groove 64, the first non-penetratingconnection hole 651 and the second non-penetrating connection hole 652,and the first penetrating connection hole 661 and the second penetratingconnection hole 662 simplifies steps. In this case, though, during theformation of the isolating section 42, an isolating section 42 may beformed also inside the light shield groove 82, which may lead to failureto provide a desired line width of the light shield 63. With smallerpixels, it is desirable that the light shield groove 82 be formed in aseparate phase from the coupling groove 64, the first non-penetratingconnection hole 651 and the second non-penetrating connection hole 652,and the first penetrating connection hole 661 and the second penetratingconnection hole 662.

The light shield 63 can be formed with tungsten, aluminum, or the likein a separate step prior to forming the connecting member 69. Formingthe light shield 63 through the damascene process simultaneously withthe formation of the connecting member 69, however, can simplify steps.This also allows the reduction in thickness of the insulating layers(e.g. the insulating layer 62) located at the side of a light receivingsection (the backside) of the first semiconductor substrate 10,contributing to an improvement of the sensitivity.

The first penetrating connection hole 661 and the second penetratingconnection hole 662 have depths 1.5 to 10 times deeper than those of thefirst non-penetrating connection hole 651 and the second non-penetratingconnection hole 652. Hence, even when the first non-penetratingconnection hole 651 and the second non-penetrating connection hole 652are successfully filled with the conductive material, the firstpenetrating connection hole 661 and the second penetrating connectionhole 662, each having an identical opening size with the firstnon-penetrating connection hole 651 and the second non-penetratingconnection hole 652, may have a void.

In this example of the present embodiment, the first penetratingconnection hole 661 and the second penetrating connection hole 662, andthe first non-penetrating connection hole 651 and the secondnon-penetrating connection hole 652 are formed with different openingsizes depending on the depths thereof. This allows the formation of theholes that have aspect ratios most suitable for the filling of theconductive material and prevent an increase in the layout space. Thiscan prevent a void caused during the filling of the conductive materialin the first penetrating connection hole 661 and the second penetratingconnection hole 662, which are deep.

Furthermore, in this example of the present embodiment, the firstnon-penetrating connection hole 651 and the second non-penetratingconnection hole 652 are connected to the first metal layer 45 a, whichis the lowermost layer in the first wiring structure 31 on the firstsemiconductor substrate 10. Hence, a space near the firstnon-penetrating connection hole 651 and the second non-penetratingconnection hole 652, or a space deeper than the first non-penetratingconnection hole 651 and the second non-penetrating connection hole 652can be used as an effective space that allows routing of a conductiveline. This is advantageous for shrinkage of a chip.

Note that, in this example of the present embodiment, the connectingmember 69 is insulated from the first semiconductor substrate 10 by theinsulating film 67 and the isolating section 42. The insulation,however, may be provided by either one of the insulating film 67 and theisolating section 42. When the isolating section 42 is not formed, theregion for the isolating section 42 is eliminated, allowing a reductionin area of pixels and an increase in area of the photodiode (PD).

As illustrated in FIG. 3F, caps 70, which are each a SiN film or a SiCNfilm having a thickness of 10 to 150 nm, are then formed so as to coverthe tops of the connecting member 69 and the light shield 63.Subsequently, an opening is formed in the insulating layer 62, which hasa low refractive index and is located above the photodiode (PD). Thehigh-refractive insulating layer 71, having a refractive index higherthan that of the insulating layer 62, is formed in a desired regionincluding the opening. The high-refractive insulating layer 71 may be,for example, formed of SiN or resin. This forms the optical waveguide LGwith the high-refractive insulating layer 71 formed in the opening asthe core and the low-refractive insulating layer 62 as the clad. Theoptical waveguide LG, thus formed, allows efficient collection of thelight entering through the backside of the first semiconductor substrateinto the photodiode (PD). Subsequently, the intermediate layer 72 isformed over an entire surface including the insulating layer 62 forplanarization. In this example of the present embodiment, the caps 70and the insulating layer 71 are formed separately in individual steps,but the insulating layer 71 may serve as the caps 70. Also in thisexample of the present embodiment, the optical waveguide LG is formed onthe side of the light entry surface of the photodiode (PD). The opticalwaveguide LG, however, may be excluded.

Furthermore, as illustrated in FIG. 3F, the color filter 73, havingoptical transparency to, for example, red (R), green (G), and blue (B),is formed on the intermediate layer 72 in accordance with each pixel.The color filter 73 can be formed by forming and patterning an organicfilm containing a pigment or a dye of a desired color. The color filter73 can be formed above the photodiode (PD) constituting a desired pixelarray. The color filter 73 may, in addition to a light transmittingsection that filters light of primary colors selectively, include alight transmitting section that filters light of colors complementary tothe primary colors or white light. Subsequently, the micro lens 74 isformed in the image sensing region that includes the top of the colorfilter 73.

Subsequently, the insulating layer 62 and the like formed on the top ofthe first semiconductor substrate 10 are etched to expose the firstsemiconductor substrate 10. The first semiconductor substrate 10 and theinterlayer insulating film 46 are further etched successively to formthe opening 77, as illustrated in FIG. 2A, so that the fourth metallayer 55 d, formed in the second wiring structure 32 on the top of thesecond semiconductor substrate 20, is exposed. The fourth metal layer 55d, thus exposed, constitutes the electrode pad 78 that is used toestablish a connection with external wiring. Subsequently, the laminate300, which is formed by joining the two semiconductor wafers, issubjected to the dicing process with the first semiconductor wafer 111and the second semiconductor wafer 222 of the laminate 300 together, sothat the laminate 300 is divided into chips. A divided firstsemiconductor wafer 111 constitutes the first member 100 and a dividedsecond semiconductor wafer 222 constitutes the second member 200. Inthis way, the semiconductor device 1, provided with the first member100, the second member 200, and the connecting member 69, is obtained.The semiconductor device 1, formed as described above, is provided witha bonding wire connected to the electrode pad 78 in a similar manner asillustrated in FIG. 8. Note that the first semiconductor wafer 111 andthe second semiconductor wafer 222 may be diced separately. In thiscase, a first chip, obtained by dicing the first semiconductor wafer111, can be the first component, and a second chip, obtained by dicingthe second semiconductor wafer 222, can be the second component. Inother words, it is also possible to bond the first chip and the secondchip and then form the connecting member 69.

An example of a second embodiment will be now described with referenceto FIGS. 4A and 4B. FIG. 4A is a cross-sectional view of a configurationas illustrated in FIG. 1B taken along the line P-Q of FIG. 1A. FIG. 4Bis a diagram of plan views of part (including a connecting member 69) ofFIG. 4A enclosed by a broken line at positions A, B, C, D, E, and F.Except for an arrangement of the connecting member 69, the presentembodiment is similar to the first embodiment and, hence, thedescription thereof will not be repeated.

The connecting member 69 according to the second embodiment includes afirst common penetrating conductive section 6831 and a second commonpenetrating conductive section 6832. The first common penetratingconductive section 6831 and the second common penetrating conductivesection 6832 are each connected to a first wiring section 310 and asecond wiring section 320. The first common penetrating conductivesection 6831 corresponds to a combination of the first non-penetratingconductive section 6811 and the first penetrating conductive section6821, provided separately in the first embodiment, and serves as thefirst non-penetrating conductive section 6811 and the first penetratingconductive section 6821. Similarly, the second common penetratingconductive section 6832 corresponds to a combination of the secondnon-penetrating conductive section 6812 and the second penetratingconductive section 6822, provided separately in the first embodiment. Inthis way, by providing a plurality of conductive sections (commonpenetrating conductive sections) that is connected to both the firstwiring section 310 and the second wiring section 320, the redundancy ofthe connecting member 69 is increased, thereby improving the reliabilityof the electrical continuity. Here, when the common penetratingconductive sections are used, the coupling conductive section may beexcluded. In addition to a common penetrating conductive section, anon-penetrating conductive section connected solely to the first wiringsection 310 and a penetrating conductive section connected solely to thesecond wiring section 320 may also be provided. Furthermore, in thepresent embodiment, the second wiring section 320 is divided into afirst pattern 3201 and a second pattern 3202. The first pattern 3201 andthe second pattern 3202 are each part of the identical second wiringsection 320 and formed in an identical fourth metal layer 55 d. Thefirst pattern 3201 and the second pattern 3202 are electricallycontinuous through a metal layer, which is different from the fourthmetal layer 55 d. Similarly, the first wiring section 310 can be dividedinto a first pattern 3101 and a second pattern 3102. Similarly, in thefirst embodiment, the first wiring section 310 and/or the second wiringsection 320 may be divided into a plurality of metal patterns within ametal layer at an identical level.

An example of a third embodiment will be now described with reference toFIGS. 5A and 5B. FIG. 5A is a cross-sectional view of a configuration asillustrated in FIG. 1B taken along the line P-Q of FIG. 1A. FIG. 5B is adiagram of plan views of part (including a connecting member 69) of FIG.5A enclosed by a broken line at positions A, B, C, D, E, and F. Exceptfor an arrangement of the connecting member 69 and a vicinity thereof,the present embodiment is similar to the first embodiment and, hence,the description thereof will not be repeated.

In the present embodiment, part of a first semiconductor substrate 10 isremoved in advance, so that conductive sections of the connecting member69 do not penetrate the first semiconductor substrate 10. Thus, FIG. 5Bdoes not have a plane in which the conductive sections are surrounded bya semiconductor substrate as illustrated in the plane B of FIG. 2B andFIG. 4B. Two penetrating conductive sections, namely a first penetratingconductive section 6821 and a second penetrating conductive section6822, are provided to penetrate a first semiconductor wafer. Thisimproves the reliability of the connecting member 69. A non-penetratingconductive section 681 for a first wiring section 310 can be short inlength because the first semiconductor substrate 10 does not have to bepenetrated. One non-penetrating conductive section 681, therefore, maybe provided as described in this example. Alternatively, a plurality ofconductive sections in contact with the first wiring section 310 may beprovided. Furthermore, the number of penetrating conductive sections incontact with a second wiring section 320 may be larger than the numberof conductive sections in contact with the first wiring section 310 whenthe plurality of conductive sections in contact with the first wiringsection 310 is provided. Here, in a manner dependent on a configurationof a circuit including semiconductor elements connected to the firstwiring section 310, the number of conductive sections in contact withthe first wiring section 310 may be larger than the number of conductivesections in contact with the second wiring section 320. This may besuitable for a case in which, for example, signals from the first wiringsection 310 of the first semiconductor substrate 10 are distributed to aplurality of circuits of the second semiconductor substrate 20.

In addition, in the present embodiment, a coupling conductive section680 of the connecting member 69 is used as an electrode pad, enablingthe elimination of the opening 77 for the electrode pad 78. Similarly,the connecting member 69 may be used as the electrode pad in otherembodiments. When the connecting member 69 is used as the electrode pad,the coupling conductive section 680 of the connecting member 69 may bemade of aluminum, and a non-penetrating conductive section in contactwith the first wiring section 310 and a penetrating conductive sectionin contact with the second wiring section 320 may be made of tungsten.This is because the aluminum, which has excellent corrosion resistance,is suitable as a material for the electrode pad.

Furthermore, in the present embodiment, the first penetrating conductivesection 6821 and the second penetrating conductive section 6822 havedifferent diameters. In this example, the first penetrating conductivesection 6821 has a larger diameter than the second penetratingconductive section 6822. Different diameters provided for thepenetrating conductive sections can ensure the reliability of theconnection in accordance with the size of a possible foreign substance.This is because the probability of the existence of a foreign substanceincreases in proportion to the diameter of a conductive section. Inother words, a large diameter for a conductive section does not alwaysresults in an improvement of the reliability of the connection, and, insome cases, a small diameter for the conductive section results in animprovement of the reliability of the connection.

With reference to FIGS. 6A to 6D, exemplified variations in positionalrelationship among a coupling conductive section 680, a plurality ofpenetrating conductive sections (a first penetrating conductive section6821 and a second penetrating conductive section 6822), a plurality ofnon-penetrating conductive sections (a first non-penetrating conductivesection 6811 and a second non-penetrating conductive section 6812), afirst wiring section 310 and a second wiring section 320 will now bedescribed. With reference to FIGS. 6A to 6D, the plurality ofpenetrating conductive sections and the plurality of non-penetratingconductive sections are both described, but the description may beapplied to one of the plurality of penetrating conductive sections andthe plurality of non-penetrating conductive sections. In FIGS. 6A to 6D,the layouts on planes A to F, which are illustrated separately in FIG.2B, are superimposed.

For the reliability of the connection by a connecting member 69,accuracy at a phase in which a connection hole is provided and theaccuracy at a phase in which a conductive section is provided areimportant. In addition, the accuracy at a phase in which a firstsemiconductor wafer 111 and a second semiconductor wafer 222 are aligned(alignment accuracy) for bonding is also important.

As illustrated in a first example in FIG. 6A, a first non-penetratingconductive section 6811 and/or a second non-penetrating conductivesection 6812 may be provided outside a straight line connecting a firstpenetrating conductive section 6821 and a second penetrating conductivesection 6822. Furthermore, the straight line connecting the firstpenetrating conductive section 6821 and the second penetratingconductive section 6822 preferably intersects with a straight lineconnecting the first non-penetrating conductive section 6811 and thesecond non-penetrating conductive section 6812. In this manner, theconnection is more likely to be provided even with some misalignment.

As illustrated in a second example in FIG. 6B, the coupling conductivesection 680 may be divided into a plurality of metal patterns within ametal layer at an identical level. In FIG. 6B, a first couplingconductive section 6801 and a second coupling conductive section 6802are provided. The first coupling conductive section 6801 couples a firstnon-penetrating conductive section 6811 and a first penetratingconductive section 6821. The second coupling conductive section 6802couples a second non-penetrating conductive section 6812 and a secondpenetrating conductive section 6822. The first coupling conductivesection 6801 and the second coupling conductive section 6802 are formedof separate metal patterns within a metal layer at an identical level.

As illustrated in a third example in FIG. 6C, a first penetratingconductive section 6821 and a second penetrating conductive section 6822may have nonsimilar shapes on a plane. In this example, the firstpenetrating conductive section 6821 has a shape of a solid cylinder, andthe second penetrating conductive section 6822 has that of a hollowcylinder. The second penetrating conductive section 6822 encloses thefirst penetrating conductive section 6821. Similarly, a firstnon-penetrating conductive section 6811 has a shape of a solid cylinder,and a second non-penetrating conductive section 6812 has that of ahollow cylinder. The second non-penetrating conductive section 6812encloses the first non-penetrating conductive section 6811.

As illustrated in a fourth example in FIG. 6D, the second wiring section320 may be divided into a first pattern 3201 and a second pattern 3202within a metal layer at an identical level. The first pattern 3201 andthe second pattern 3202 are metal patterns of the same fourth metallayer 55 d of the second wiring section 320. The first pattern 3201 andthe second pattern 3202 are electrically continuous through a metallayer that is not shown. Similarly, the first wiring section 310 mayalso be divided into a first pattern 3101 and a second pattern 3102. Bydividing wiring into a plurality of patterns in this way, thereliability of the connection is further improved. Furthermore, in thisexample, the coupling conductive section is divided into a plurality ofsections, namely a first coupling conductive section 6801 and a secondcoupling conductive section 6802, similarly to the second example. Afirst penetrating conductive section 6821 is connected to the firstpattern 3201 of the second wiring section 320. A first non-penetratingconductive section 6811 is connected to the first pattern 3101 of thefirst wiring section 310. The first coupling conductive section 6801couples the first penetrating conductive section 6821 and the firstnon-penetrating conductive section 6811. A second penetrating conductivesection 6822 is connected to the second pattern 3202 of the secondwiring section 320. A second non-penetrating conductive section 6812 isconnected to the second pattern 3102 of the first wiring section 310.The second coupling conductive section 6802 couples the secondpenetrating conductive section 6822 and the second non-penetratingconductive section 6812.

Thus far, some embodiments have been described with the firstsemiconductor substrate 10, the first wiring structure 31, the secondwiring structure 32, and the second semiconductor substrate 20positioned in the sequence set forth, as illustrated in FIG. 7A, butthis is not limiting. With reference to FIGS. 7A to 7D, a laminate,including a first member 100 and a second member 200 bonded together, iseach illustrated with a connecting member 69 formed therein, with thefirst member 100 and the second member 200 in a different orientation.The first member 1001 includes a first semiconductor element 101 and afirst wiring structure 31 that includes a first wiring section 310connected to the first semiconductor element 101. The second member 200includes a second semiconductor element 202 and a second wiringstructure 32 that includes a second wiring section 320 connected to thesecond semiconductor element 202. The connecting member 69 is providedto include the first wiring section 310 and the second wiring section320. The connecting member 69 includes a plurality of penetratingconductive sections (a first penetrating conductive section 6821 and asecond penetrating conductive section 6822). The penetrating conductivesections each penetrate the first member 100 and are electricallycontinuous with the second wiring section 320. In addition, theconnecting member 69 may include conductive sections (a firstnon-penetrating conductive section 6811 and a second non-penetratingconductive section 6812), which are each electrically continuous withthe first wiring section 310. Furthermore, the connecting member 69 mayinclude a coupling conductive section 680 that couples the penetratingconductive sections and the conductive sections. FIGS. 7A and 7D haveabove-mentioned commonalities. As described above, the penetratingconductive sections may be formed in a phase to form, at correspondingpositions, a plurality of penetrating connection holes that penetratesthe first member 100 to reach the second wiring section 320 and in aphase to form a conductive section, which is in contact with the secondwiring section 320, inside each of the penetrating connection holes. Theconductive sections for the first wiring section 310 are formed in asimilar manner.

FIG. 7B is a diagram of an embodiment in which a first wiring structure31, a first semiconductor substrate 10, a second wiring structure 32,and a second semiconductor substrate 20 are positioned in the sequenceset forth. A plurality of penetrating conductive sections, namely 6821and 6822, penetrates a first semiconductor wafer 111 (to be specific,the first semiconductor substrate 10 and the first wiring structure 31)to be connected to a second wiring section 320. A non-penetratingconductive section 6810 is formed relatively shallowly to be connectedto a first wiring section 310. Thus, the number of the non-penetratingconductive section 6810 is one in this embodiment, but the numberthereof may be more than one.

FIG. 7C is a diagram of an embodiment in which a first semiconductorsubstrate 10, a first wiring structure 31, a second semiconductorsubstrate 20, and a second wiring structure 32 are positioned in thesequence set forth. A plurality of penetrating conductive sections,namely 6821 and 6822, penetrates a first semiconductor wafer 111 (to bespecific, the first semiconductor substrate 10 and the first wiringstructure 31) and the second semiconductor substrate 20 to be connectedto a second wiring section 320. A plurality of non-penetratingconductive sections, namely 6811 and 6812 and connected to a firstwiring section 310, penetrates the first semiconductor substrate 10. Thenumber of conductive sections connected to the first wiring section 310may be one.

FIG. 7D is a diagram of an embodiment in which a first wiring structure31, a first semiconductor substrate 10, a second semiconductor substrate20, and a second wiring structure 32 are positioned in the sequence setforth. A plurality of penetrating conductive sections, namely 6821 and6822, penetrates a first semiconductor wafer 111 (to be specific, thefirst semiconductor substrate 10 and the first wiring structure 31) andthe second semiconductor substrate 20.

As described above, a plurality of conductive sections is provided to bein contact with the second wiring section 320, resulting in improvedreliability of the electrical continuity between the first wiringsection 310 and the second wiring section 320, which allows an improvedyield of a semiconductor device. Furthermore, a plurality of conductivesections is provided to be in contact with the first wiring section 310,resulting in improved reliability of the electrical continuity betweenthe first wiring section 310 and the second wiring section 320, whichallows an improved yield of a semiconductor device.

While the present invention has been described with reference toexemplary embodiments, it is to be understood that the invention is notlimited to the disclosed exemplary embodiments. The scope of thefollowing claims is to be accorded the broadest interpretation so as toencompass all such modifications and equivalent structures andfunctions.

What is claimed is:
 1. A semiconductor device comprising: a firstsemiconductor substrate; a second semiconductor substrate; a firstwiring section arranged between the first semiconductor substrate andthe second semiconductor substrate; a second wiring section arrangedbetween the first semiconductor substrate and the second semiconductorsubstrate; and a connecting member configured to electrically connectthe first wiring section and the second wiring section, wherein theconnecting member comprises at least one of a plurality of conductivesections provided through the first semiconductor substrate and incontact with the first wiring section and a plurality of conductivesections provided through the first semiconductor substrate and incontact with the second wiring section.
 2. The semiconductor deviceaccording to claim 1, wherein the second wiring section is connected toa second semiconductor element provided on the second semiconductorsubstrate.
 3. The semiconductor device according to claim 2, wherein thefirst wiring section is electrically connected to an electrode pad. 4.The semiconductor device according to claim 1, wherein an insulatingfilm is arranged between the connecting member and the semiconductorsubstrate.
 5. The semiconductor device according to claim 1, wherein theplurality of conductive sections include a conductive section providedthrough the first semiconductor substrate and configured to electricallyconnect the first wiring section and the second wiring section incommon.
 6. The semiconductor device according to claim 1, wherein theplurality of conductive sections are connected by a coupling conductivesection arranged on the first semiconductor substrate on a side oppositeto the second semiconductor substrate.
 7. The semiconductor deviceaccording to claim 1, wherein the plurality of conductive sections arein contact with the same pattern of the first wiring section.
 8. Thesemiconductor device according to claim 1, wherein the plurality ofconductive sections are in contact with the same pattern of the secondwiring section.
 9. The semiconductor device according to claim 1,wherein at least one of the plurality of conductive sections are incontact with a pattern included in a metal layer that includes anotherpattern in contact with a contact plug connected to the firstsemiconductor substrate.
 10. The semiconductor device according to claim1, wherein the first wiring section is connected to a firstsemiconductor element provided on the first semiconductor substrate. 11.The semiconductor device according to claim 1, further comprising acolor filter that includes a light transmitting section that filterslight of primary colors selectively, include a light transmittingsection that filters white light.
 12. The semiconductor device accordingto claim 1, wherein the first wiring section including a plurality ofmetal layers.
 13. The semiconductor device according to claim 12,wherein a primary material of the plurality of metal layers are copper.14. The semiconductor device according to claim 1, wherein the secondwiring section including a plurality of metal layers.
 15. Thesemiconductor device according to claim 14, wherein a primary materialof the plurality of metal layers are copper.
 16. The semiconductordevice according to claim 1, wherein a thickness of the firstsemiconductor substrate is, not more than 10 um.
 17. The semiconductordevice according to claim 1, wherein a primary material of the pluralityof conductive sections are copper or tungsten.
 18. The semiconductordevice according to claim 1, wherein the first semiconductor substratehas an array of photoelectric conversion elements.
 19. An electronicapparatus comprising: the semiconductor device according to claim 1; anda display device configured to display an image based on a signalobtained from the semiconductor device.
 20. The electronic apparatusaccording to claim 19, wherein the display device constitute a touchpanel.